Ferroelectricity in intergrowth Bi3TiNbO9–Bi4Ti3O12 ceramics
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Ferroelectricity in intergrowth Bi3TiNbO9–Bi4Ti3O12 ceramics
Monophase intergrowth Bi3TiNbO9–Bi4Ti3O12 BTN-BIT ceramics were synthesized by solid-state reaction method. In the temperature dependence of dielectric permittivity, two anomalies appeared at 945 and 1114 K, respectively. The ferroelectric hysteresis loop measurement revealed that the 2Pr is 20 C/cm 2, nearly as twice as that of the BTN ceramic. The crystal structure analysis indicated that the...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2006
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2199751